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Our GW calculation is performed using the open-source, code, which was developed by the Universite Catholique de Louvain, Corning Incorporated, and other contributors (URL: http://www.abinit.org). The pseudopotentials are generated using the, code [, and, For GaAs, our calculated quasipartical gap is 1.4 eV. For the nitrides, we find that the GW gaps are 3.3, 3.5, 0.3, 0.5 eV, respectively, for ZB-GaN, WZ-GaN, ZB-InN, and WZ-InN. Detailed discussion of the GW results will be presented elsewhere
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Our GW calculation is performed using the open-source ABINIT3.3 code, which was developed by the Universite Catholique de Louvain, Corning Incorporated, and other contributors (URL: http://www.abinit.org). The pseudopotentials are generated using the FHI98PP code [M. Fuchs and M. Scheffler, Comput. Phys. Commun.119, 67 (1999)]. For GaAs, our calculated quasipartical gap is 1.4 eV. For the nitrides, we find that the GW gaps are 3.3, 3.5, 0.3, 0.5 eV, respectively, for ZB-GaN, WZ-GaN, ZB-InN, and WZ-InN. Detailed discussion of the GW results will be presented elsewhere.
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39
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0037121634
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After the submission of this paper we note that the quasipartical calculation of, and,) also find that the band gap of InN is less than 1 eV, in agreement with our result
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After the submission of this paper we note that the quasipartical calculation of F. Bechstedt and J. Furthmuller, J. Cryst. Growth246, 315 (2002) also find that the band gap of InN is less than 1 eV, in agreement with our result.
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J. Cryst. Growth
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Bechstedt, F.1
Furthmuller, J.2
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