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Journal of Crystal Growth

Volumn 313, Issue 1, 2010, Pages 16-19

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

(7) Pan, Yang a Wang, Ti a Shen, Kai a Peng, Ting a Wu, Kemin a Zhang, Wenyi a Liu, Chang a

a WUHAN UNIVERSITY (China)

Author keywords

A3. Molecular beam epitaxy; B1. InN; B1. Nanocolumns; B2. Semiconducting III V materials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; B1. INN; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GAN EPILAYERS; GAS-SOLID; GROWTH MECHANISMS; HIGH QUALITY; INGAN BUFFER LAYER; INN FILMS; JOINT ACTIONS; NANO-COLUMNS; NANOCOLUMN; RADIO FREQUENCIES; RAPID GROWTH; SEMI CONDUCTING III-V MATERIALS; VOLMER-WEBER MODES;

BUFFER LAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MOLECULAR BEAMS;

EID: 78549234641 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.033 Document Type: Article

Times cited : (9)

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