Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

Vacuum

Volumn 111, Issue , 2015, Pages 15-18

  Zhao, Yang ^a   Wang, Hui ^b   Wu, Guoguang ^a   Jing, Qiang ^a   Gao, Fubin ^a   Li, Wancheng ^a   Zhang, Baolin ^a   Du, Guotong ^a,c  

^a JILIN UNIVERSITY   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Indium nitride; Nitridation; PAMBE; Photoluminescence

Indexed keywords

PHOTOLUMINESCENCE;

ELECTRICAL AND OPTICAL PROPERTIES; EPILAYERS GROWN; INDIUM NITRIDE; PAMBE;

NITRIDATION;

EID: 84908200549     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2014.09.014     Document Type: Article

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