SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 529, Issue , 2013, Pages 169-172

Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template

(5) Chen, Wei Chun a Kuo, Shou Yi b Lai, Fang I c Lin, Woei Tyng c Hsiao, Chien Nan a

a INSTRUMENT TECHNOLOGY RESEARCH CENTER (Taiwan)

b CHANG GUNG UNIVERSITY (Taiwan)

c YUAN ZE UNIVERSITY (Taiwan)

Author keywords

Indium nitrides; Metalorganic molecular beam epitaxy; Substrate temperature

Indexed keywords

DEGREE OF ORIENTATION; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON CONCENTRATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN TEMPLATE; HIGH GROWTH RATE; INDIUM NITRIDE; INDIUM NITRIDE EPILAYER; INDIUM NITRIDE FILMS; MAXIMUM THICKNESS; METAL-ORGANIC MOLECULAR BEAM EPITAXY; NEAR-INFRARED EMISSIONS; OPTICAL MEASUREMENT; PHOTOLUMINESCENCE MEASUREMENTS; RADIO FREQUENCIES; SCANNING ELECTRON MICROSCOPY IMAGE; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; TRANSMITTANCE ELECTRON MICROSCOPY; UNDOPED FILMS;

ELECTRIC PROPERTIES; FIELD EMISSION MICROSCOPES; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84873718604 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.06.031 Document Type: Conference Paper

Times cited : (11)

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