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Journal of Physics D: Applied Physics

Volumn 45, Issue 21, 2012, Pages

Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure

(6) Wu, Guoguang a Du, Guotong a Gao, Fubin a Wang, Hui b Shen, Chunsheng a Li, Wancheng a

a JILIN UNIVERSITY (China)

b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; ELECTROLUMINESCENCE EMISSION; FORWARD BIAS; HETEROJUNCTION DIODES; HETEROJUNCTION STRUCTURES; HIGH-DENSITY; NANODOTS; NEAR INFRARED; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SHORT WAVELENGTHS; SIZE-QUANTIZATION EFFECTS; SURFACE ELECTRON; WAVELENGTH RANGES;

HETEROJUNCTIONS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES; SILICON;

ELECTROLUMINESCENCE;

EID: 84861078291 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/21/215102 Document Type: Article

Times cited : (18)

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