Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation

Journal of Alloys and Compounds

Volumn 611, Issue , 2014, Pages 253-259

  Zhang, J W ^a   He, G ^a,b   Zhou, L ^a,c   Chen, H S ^a   Chen, X S ^b   Chen, X F ^a   Deng, B ^a   Lv, J G ^d   Sun, Z Q ^a  

^a ANHUI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c ANHUI UNIVERSITY OF CHINESE MEDICINE   (China)

^d HEFEI NORMAL UNIVERSITY   (China)

Author keywords

High k gate dielectrics; Optical constant; RF sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GATE DIELECTRICS; HAFNIUM; HAFNIUM OXIDES; LOGIC GATES; OPTICAL CONSTANTS; REFRACTIVE INDEX; SILICATES; SILICON; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION CO-EFFICIENT; CRYSTALLIZATION TEMPERATURE; EXTINCTION COEFFICIENT (K); FOURIER TRANSFORMATIONS; HIGH-K GATE DIELECTRICS; MICROSTRUCTURE OPTIMIZATIONS; RF-SPUTTERING; TIO;

TITANIUM DIOXIDE;

EID: 84902239031     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.05.074     Document Type: Article

References (36)

1. M. Ji, L. Wang, Y.H. Xiong, and J. Du J. Rare. Earth 28 2010 396 398
2. F. Wei, H. Tu, Y. Wang, S. Yue, and J. Du Appl. Phys. Lett. 92 2008 012901-1 012901-3
3. X.Q. Zhang, H.L. Tu, F. Wei, L. Wang, and J. Du J. Cryst. Growth 312 2009 41 43
4. S.K. Mandal, S. Charkraborty, and C.K. Maiti Microelectron. Eng. 81 2005 206 211
5. G. He, Q. Fang, M. Liu, L.Q. Zhu, and L.D. Zhang J. Cryst. Growth 268 2004 155 162
6. E. Atanassova, M. Georgieva, D. Spassov, and A. Paskaleva Microelectron. Eng. 87 2010 668 676
7. G. He, L.D. Zhang, G.W. Meng, G.H. Li, Q. Fang, and J.P. Zhang J. Appl. Phys. 102 2007 094103-1 094103-5
8. M.C. Cisneros-Morales, and C.R. Aita Appl. Phys. Lett. 93 2008 021915-1 021915-3
9. C.X. Li, X. Zou, P.T. Lai, and C.L. Chan Microelectron. Reliab. 48 2008 526 530
10. C. Ye, H. Wang, J. Zhang, Y. Ye, and Y. Wang J. Appl. Phys. 107 2010 104103-1 104103-4
11. F. Chen, X. Bin, C. Hella, X. Shi, W.L. Gladfelter, and S.A. Campbell Microelectron. Eng. 72 2004 263 266
12. M.C. Cisneros-Morales, and C.R. Aita J. Appl. Phys. 108 2010 123506-1 123506-6
13. L.M. Lin, and P.T. Lai J. Appl. Phys. 102 2007 054515-1 054515-5
14. X.L. Zhang, S.Y. Ma, F.M. Li, F.C. Yang, J. Liu, and Q. Zhao J. Alloys Comp. 574 2013 149 154
15. G. Aygun, A. Cantas, Y. Simsek, and R. Turan Thin Solid Films 187 2011 5820 5825
16. M.A. Khaskheli, P. Wu, R. Chand, X.F. Li, H. Wang, S.P. Zhang, S. Chen, and Y.L. Pei Appl. Surf. Sci. 266 2013 355 359
17. C.S. Prajapati, and P.P. Sahay Mater. Sci. Semicon. Proc. 16 2013 200 210
18. A. Boukhachem, B. Ouni, M. Karyaoui, A. Madani, R. Chtourou, and M. Amlouk Mater. Sci. Semicon. Proc. 15 2012 282 292
19. V. Singh, S.K. Sharma, D. Kumar, and R.K. Nahar Microelectron. Eng. 91 2012 137 143
20. I. Akyuz, S. Kose, E. Ketenci, V. Bilgin, and F. Atay J. Alloys Comp. 509 2011 1947 1952
21. F.K. Shan, Z.F. LIu, G.X. LIu, B.C. Shin, Y.S. Yu, S.Y. Kim, and T.S. Kim J. Korean. Phys. Soc. 44 2004 1215 1219
22. Y.J. Ham, J.K. Park, W. Lee, C.E. Lee, and W. Park Mater. Res. Bull. 47 2012 2403 2406
23. A. Ahmad, S. Saq'an, B. Lahlouh, M. Hassan, A. Alsaad, and H. El-Nasser Physica B 404 2009 1 6
24. S. Kose, E. Ketenci, V. Bilgin, F. Atay, and I. Akyuz Curr. Appl. Phys. 12 2012 890 895
25. A. Mhamdi, B. Ouni, A. Amlouk, K. Boubaker, and M. Amlouk J. Alloys Comp. 582 2014 810 822
26. V.V. Afanasev, A. Stesmans, F. Chen, and M. Li J. Appl. Phys. 95 2004 7936 7939
27. H.H. Güllü, Ö. BayraklI, I. Candan, E. Cos kun, and M. Parlak J. Alloys Comp. 566 2013 83 89
28. M. Girtan, and G. Folcher Surf. Coat. Technol. 172 2003 242 250
29. D.H. Triyoso, R.I. Hegde, S. Zollner, M.E. Ramon, S. Kalpat, R. Gregory, X.D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B.E. White Jr., and P.J. Tobin J. Appl. Phys. 98 2005 054104-1-8
30. T.P. Smirnova, V.V. Kaichev, L.V. Yakovkina, V.I. Kosiakov, S.A. Beloshapkin, F.A. Kuznetsov, M.C. Lebedev, and V.A. Gritsenko Inorg. Mater. 44 2008 965 970
31. T. Tan, Z. Liu, H. Lu, W. Liu, and F. Yan Vaccum 83 2009 1155 1158
32. A. Ramadoss, and S.J. Kim J. Alloys Comp. 544 2012 115 119
33. T. Yu, C.G. Jin, X.M. Yang, Y.J. Dong, H.Y. Zhang, L.J. Zhang, X.M. Wu, and Z.F. Wu Appl. Surf. Sci. 258 2012 2953 2958
34. G. He, Z.Q. Sun, Y.Q. Ma, M.Z. Wu, Y.M. Liu, S.W. Shi, G. Li, X.S. Chen, L.D. Zhang, and Z.B. Fang Semicond. Sci. Technol. 26 2011 105019-1-8
35. T.P. Smirnova, L.V. Yakovkina, S.A. Beloshapkin, V.V. Kaichev, N.I. Alferova, and J.H. Song J. Phys. Chem. Solids 71 2010 836 840
36. G. He, M. Liu, L.Q. Zhu, M. Chang, Q. Fang, and L.D. Zhang Surf. Sci. 576 2005 67 75