Ge-channel p-MOSFETs with ZrO2 gate dielectrics

Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 206-211

  Mandal, S K ^a   Chakraborty, S ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Ge MOSFET simulation; High k gate dielectric; SiGe; Strained Ge; ZrO2

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GERMANIUM; INTERFACES (MATERIALS); MOS CAPACITORS; ZIRCONIUM COMPOUNDS;

GE-MOSFET SIMULATION; HIGH-K GATE DIELECTRICS; SIGE; STRAINED-GE; ZRO2;

MOSFET DEVICES;

EID: 23444452422     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.03.008     Document Type: Conference Paper

References (12)

1. C.O. Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre, and K.C. Saraswat IEEE Electron. Dev. Lett. 23 2002 473 475
2. W.P. Bai, N. Lu, J. Liu, A. Ramirez, D.L. Kwong, D. Wristers, A. Ritenour, L. Lee, and D. Antoniadis IEEE VLSI Tech. Dig. 2003 121 122
3. A. Ritenour, S.F. Yu, M.L. Lee, N. Lu, W.P. Bai, A.J. Pitera, E.A. Fitzgerald, D.L. Kwong, and D.A. Antoniadis IEEE IEDM Tech. Dig. 2003 433 436
4. J.P. Chang, and Y.S. Lin J. Appl. Phys. 90 2001 2964 2969
5. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, and G.E. Muilenberg Hand book of X-ray photoelectron spectroscopy 1978 Perkin-Elmer Corp. Minnesota
6. E.H. Nicollian, and J.R. Brews MOS (metal oxide semiconductor) physics and technology 1982 John Wiley & Sons New York p. 222-224
7. L.M. Terman Solid-State Electron. 5 1962 285 299
8. D.K. Schroder Semiconductor material and device characterization 1998 John Wiley & Sons New York p. 378
9. T. Low, Y.T. Hou, M.F. Li, C. Zhu, D.L. Kwong, and A. Chin IEEE VLSI Tech. Dig. 2003 117 118
10. C.H. Huang, D.S. Yu, A. Chin, C.H. Wu, W.J. Chen, C. Zhu, M.F. Li, B.J. Cho, and D.L. Kwong IEEE IEDM Tech. Dig. 2003 319 322
11. H. Shang, H.O. Schimdt, J. Ott, P. Kozlowski, S. Steen, E.C. Jones, H.S.P. Wong, and W. Hanesch IEEE Electron Dev. Lett. 24 2003 242 244
12. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, and K.C. Saraswat IEEE IEDM Tech. Dig. 2002 437 440