Study of rapid thermal annealing on ultra thin high-k HfO 2 films properties for nano scaled MOSFET technology

Microelectronic Engineering

Volumn 91, Issue , 2012, Pages 137-143

  Singh, Vikram ^a   Sharma, Satinder K ^b   Kumar, Dinesh ^c   Nahar, R K ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

^b INDIAN INSTITUTE OF INFORMATION TECHNOLOGY   (India)

^c KURUKSHETRA UNIVERSITY   (India)

Author keywords

AFM; CV; FT IR; HfO 2; High k; IV; RTA; Ultra thin films; XRD

Indexed keywords

AFM; CV; FT-IR; HFO 2; HIGH-K; IV; XRD;

AMORPHOUS FILMS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM OXIDES; MOS CAPACITORS; MOSFET DEVICES; NITROGEN; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SILICON; THIN FILMS;

INTERFACES (MATERIALS);

EID: 84855548632     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.09.005     Document Type: Article

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