Cube-on-cube epitaxy of Gd2O3-doped HfO2 films on Si(1 0 0) substrates by pulse laser deposition

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 41-43

  Zhang, Xinqiang ^a   Tu, Hailing ^a   Wei, Feng ^a   Wang, Lei ^a   Du, Jun ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A3. Laser epitaxy; B2. Dielectric materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; A3. LASER EPITAXY; B2. DIELECTRIC MATERIALS; CAPACITANCE VOLTAGE; CUBIC STRUCTURE; ELECTRICAL FIELD; ELECTRICAL PROPERTY; EPITAXIALLY GROWN; HIGH-K GATE DIELECTRICS; IN-SITU; INTERFACIAL LAYER; ORIENTATION RELATIONSHIP; PULSE LASER DEPOSITION; SI(1 0 0);

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; ELECTRONS; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACIAL ENERGY; LASERS; PULSED LASER DEPOSITION; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICIDES; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 70449507457     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.049     Document Type: Article

References (20)

1. Wei F., Tu H.L., Wang Y., Yue S.J., and Du J. Appl. Phys. Lett. 92 (2008) 012901
2. Wilk G.D., Wallace R.M., and Anthony J.M. Appl. Phys. Lett. 89 (2001) 5243
3. Lee B.H., Kang L., Qi W.J., Nieh R., Jeon Y., Onishi K., and Kwong D.L. Tech. Dig.-Int. Electron Devices Meet (1999) 135
4. Robertson J. J. Vac.-Sci. Technol. B 18 (2000) 1785
5. Först C., Ashman C., Schwarz K., and Blöchl P. Nature 427 (2004)
6. H.J. Osten, J.P. Liu, P. Gaworzewski, E. Bugiel, P. Zaumseil, Tech. Dig. IEDM, 2000, pp. 653-656.
7. F. Zaunert, R. Endres, U. Schwalke, Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007-Workshop, 2007, pp. 488-491.
8. Wang Y., Wei F., Yue S.J., Yang Z.M., and Du J. Appl. Phys. Lett. 92 (2008) 012915
9. Molle A., Wiemer C., Nurul Md., Bhuiyan K., Tallarida G., Fanciulli M., and Pavia G. Appl. Phys. Lett. 90 (2007) 193511
10. Czernohorsky M., Bugiel E., Osten H.J., Fissel A., and Kirfel O. Appl. Phys. Lett. 88 (2006) 152905
11. Apostolopoulos G., Vellianitis G., Dimoulas A., Alexe M., Scholz R., Fanciulli M., Dekadjevi D.T., and Wiemer C. Appl. Phys. Lett. 81 (2002) 3549
12. Kortan A.R., Hong M., Kwo J., Mannaerts J.P., and Kopylov N. Phys. Rev. B 60 (1999) 10913
13. Tuttle B.R. Phys. Rev. B 75 (2007) 235324
14. Zhao X., and Vanderbitlt D. Phys. Rev. B 65 (2002) 233106
15. Robertson J. J. Vac. Sci. Technol. B 18 (2000) 1785
16. K. Tomida, K. Kita, A. Toriumi, Extended Abstracts of the 2005 International Conference on Solid State Device and Materials. 232 (2005).
17. Govindarajan S., Böscke T.S., Sivasubramani P., Kirsch P.D., Lee B.H., Tseng H.H., and Jammy R. Appl. Phys. Lett. 91 (2007) 062906
18. Andrievskaya E.R. J. Eur. Ceram. Soc. 6980 (2008)
19. Guo X.X., Braun W.G., Jenichen B., and Ploog K.H. J. Cryst. Growth 290 (2006)
20. Kawamoto S., Jameson J., Griffin P., Cho K., and Dutton R. IEEE Electron. Dev. Lett. 22 (2001)