Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

Journal of Rare Earths

Volumn 28, Issue 3, 2010, Pages 396-398

  JI, Mei ^a   WANG, Lei ^a   XIONG, Yuhua ^a   DU, Jun ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

Gd2O3; high k; metal oxide semiconductor (MOS); rare earths

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRONEGATIVITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS CAPACITORS; RADIUM; RARE EARTHS;

EFFECTIVE OXIDE THICKNESS; ELECTRICAL CHARACTERISTIC; GATE DIELECTRIC LAYERS; GD2O3; HIGH-K GATE DIELECTRICS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MOS GATES; OPTIMUM CONCENTRATION; OXIDE CHARGE; OXIDE CHARGE DENSITY;

GADOLINIUM;

EID: 77953573831     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1002-0721(09)60119-8     Document Type: Article

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