Structural and dielectric properties of Ti and Er co-doped HfO 2 gate dielectrics grown by RF sputtering

Applied Surface Science

Volumn 266, Issue , 2013, Pages 355-359

  Khaskheli, Murad Ali ^a   Wu, Ping ^a   Chand, Ram ^b   Li, Xianfei ^a   Wang, Hui ^a   Zhang, Shiping ^a   Chen, Sen ^a   Pei, Yili ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

High k dielectrics; Sputtering; Substrate temperature; Thin films

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ERBIUM; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); OXYGEN VACANCIES; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AS INTERFACES; CAPACITANCE VALUES; CAPACITANCE VOLTAGE; CHEMICAL BONDINGS; CHEMICAL COMPOSITIONS; HFO2 GATE DIELECTRICS; HYSTERESIS VOLTAGE; SUBSTRATE TEMPERATURE;

GATE DIELECTRICS;

EID: 84872773515     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.12.026     Document Type: Article

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