Characteristics of GaN and AlGaN/GaN FinFETs

Solid-State Electronics

Volumn 97, Issue , 2014, Pages 66-75

  Lee, Jung Hee ^a   Im, Ki Sik ^a   Kang, Hee Sung ^a   Lee, Jae Hoon ^b   Chang, Sung Jae ^c   Cristoloveanu, Sorin ^c   Bawedin, Maryline ^d  

^a Kyungpook National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

AlGaN GaN; FinFET; Junctionless; MOSFET; Nanochannel; Normally off

Indexed keywords

ATOMIC LAYER DEPOSITION; DRAIN CURRENT; ELECTRON GAS; GATE DIELECTRICS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MOS DEVICES; MOSFET DEVICES;

ALGAN/GAN; FINFET; JUNCTIONLESS; MOS-FET; NANO CHANNELS; NORMALLY OFF;

GALLIUM NITRIDE;

EID: 84901948994     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2014.04.033     Document Type: Article

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