Effects of TMAH treatment on device performance of normally off Al 2O3/GaN MOSFET

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1376-1378

  Kim, Ki Won ^a   Jung, Sung Dal ^a   Kim, Dong Seok ^a   Kang, Hee Sung ^a   Im, Ki Sik ^a   Oh, Jae Joon ^b   Ha, Jong Bong ^b   Shin, Jai Kwang ^b   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

GaN; MOSFETs; normally off; tetramethylammonium hydroxide (TMAH)

Indexed keywords

DEVICE PERFORMANCE; GAN; GATE LENGTH; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; MOS-FET; MOSFETS; NORMALLY OFF; TETRAMETHYL AMMONIUM HYDROXIDE;

DRAIN CURRENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 80053572696     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2163293     Document Type: Article

References (15)

1. T. P. Chow and R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1481-1483, Aug. 1994.
2. O. Akutas, Z. F. Fan, S. N. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, "High temperature characteristics of AlGaN/GaN modulation doped field effect transistors," Appl. Phys. Lett., vol. 69, no. 25, pp. 3872-3874, Dec. 1996. (Pubitemid 126593077)
3. C. H. Chen, S. Keller, E. Haberer, L. Zhang, S. P. DenBaars, E. L. Hu, and U. K. Mishra, " Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 17, no. 6, pp. 2755-2758, Nov. 1999.
4. T. Oka and T. Nozawa, "AlGaN/GaN recessedMIS-gate HFET with highthreshold-voltage normally-off operation for power electronics applications," IEEE Electron Device Lett., vol. 29, no. 7, pp. 668-670, Jul. 2008.
5. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, Jul. 2005. (Pubitemid 41046715)
6. C. Y. Chang, S. J. Pearton, C. F. Lo, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, and P. P. Chow, "Development of enhancement mode AlN/GaN high electron mobility transistors," Appl. Phys. Lett., vol. 94, no. 26, p. 263 505, Jun. 2009.
7. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate injection transistor (GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393-3399, Dec. 2007.
8. G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. G. Xing, and D. Jena, "Threshold voltage control in Al0.72Ga0.28N/AlN/GaN HEMTs by work-function engineering," IEEE Electron Device Lett., vol. 31, no. 9, pp. 954-956, Sep. 2010.
9. T. Kachi, "GaN power devices for automotive applications," in Proc. IEEE Compound Semicond. IC Symp. Tech. Dig., 2007, pp. 13-16.
10. Y. Cai, Z. Cheng, W. C. W. Tang, K. M. Lau, and K. J. Chen, "Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2223-2230, Sep. 2006.
11. C. Sanabria, A. Chakraborty, H. Xu, M. J. Rodwell, U. K. Mishra, and R. A. York, "The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 27, no. 1, pp. 19-21, Jan. 2006.
12. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, "High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application," IEEE Trans. Electron Devices, vol. 51, no. 11, pp. 1913-1917, Nov. 2004.
13. J. T. L. Thong, W. K. Choi, and C. W. Chong, "TMAH etching of silicon and the interaction of etching parameters," Sens. Actuators A, Phys., vol. 63, no. 3, pp. 243-249, Dec. 1997. (Pubitemid 127381590)
14. Z. Yang, R. Wang, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen, "GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS," Sens. Actuators A, Phys., vol. 130/131, no. 14, pp. 371-378, Aug. 2006. (Pubitemid 44037317)
15. G. Ghibaudo, "New method for the extraction of MOSFET parameter," Electron. Lett., vol. 24, no. 9, pp. 543-545, Apr. 1988. (Pubitemid 18621793)