Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 192-194

  Im, Ki Sik ^a   Ha, Jong Bong ^a   Kim, Ki Won ^a   Lee, Jong Sub ^a   Kim, Dong Seok ^a   Hahm, Sung Ho ^a   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

Author keywords

2 D electron gas (2DEG); GaN; MOSFETs; Normally off; Silicon substrate

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN/GAN HETEROSTRUCTURES; D ELECTRONS; DEVICE PERFORMANCE; EXTRINSIC TRANSCONDUCTANCE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GROWTH OF GAN; MOS-FET; MOSFETS; NORMALLY OFF; SILICON SUBSTRATES; SOURCE AND DRAINS;

DENSITY OF GASES; DRAIN CURRENT; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTIONS; LITHOGRAPHY; MOSFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77649190280     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039024     Document Type: Article

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