Normally off single-nanoribbon Al2O3GaN MISFET

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 27-29

  Im, Ki Sik ^a   Kim, Ryun Hwi ^a   Kim, Ki Won ^a   Kim, Dong Seok ^a   Lee, Chun Sung ^b   Cristoloveanu, Sorin ^c   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Korea Telecommunication Component Co Ltd   (South Korea)

^c IMEP LAHC   (France)

Author keywords

Fin shaped field effect transistor (FinFET); GaN; metal insulator semiconductor field effect transistor (MISFET); nanoribbon; normally off; triple gate

Indexed keywords

GAN; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NANORIBBONS; NORMALLY OFF; TRIPLE-GATE;

ALUMINUM; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MISFET DEVICES; NANOSTRUCTURES;

GALLIUM NITRIDE;

EID: 84871741529     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2222861     Document Type: Article

References (15)

1. K. Ohi and T. Hashizume, "Drain current stability and controllability of threshold voltage and subthreshold current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor, " Jpn. J. Appl. Phys., vol. 48, no. 8, p. 081002, Aug. 2009.
2. S. Liu, Y. Cai, G. Gu, J. Wang, C. Zeng, W. Shi, Z. Feng, H. Qin, Z. Cheng, C. Chen, and B. Zhang, "Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs, " IEEE Electron Device Lett., vol. 33, no. 3, pp. 354-356, Mar. 2012.
3. B. Lu, E. Matioli, and T. Palacios, "Tri-gate normally-off power MISFET, " IEEE Electron Device Lett., vol. 33, no. 3, pp. 360-362, Mar. 2012.
4. T. Zimmermann, Y. Cao, X. Luo, D. Jena, and H. Xing, "Top-down AlN/GaN enhancement-& depletion-mode nanoribbon HEMTs, " in Proc. 67th Annu. Device Res. Conf., Dec. 2009, pp. 129-130.
5. M. Azize, A. L. Hsu, O. I. Saadat, M. Smith, X. Gao, S. Guo, S. Gradecak, and T. Palacios, "High-electron-mobility transistors based on InAlN/GaN nanoribbon, " IEEE Electron Device Lett., vol. 32, no. 12, pp. 1680-1682, Dec. 2011.
6. M. Azize and T. Palacios, "Top-down fabrication of AlGaN/GaN nanoribbons, " Appl. Phys. Lett., vol. 98, no. 4, p. 042103, Jan. 2011.
7. Y. Li, J. Xiang, F. Qian, S. Gradecak, Y. Wu, H. Yan, D. A. Blom, and C. M. Lieber, "Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors, " Nano Lett., vol. 6, no. 7, pp. 1468-1473, Jul. 2006. (Pubitemid 44195330)
8. W. Lu, P. Xie, and C. M. Lieber, "Nanowire transistor performance limits and applications, " IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 2859-2876, Nov. 2008.
9. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate injection transistor (GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation, " IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393-3399, Dec. 2007.
10. L. Yuan, H. Chen, and K. J. Chen, "Normally off AlGaN/GaN metal-2DEG tunnel-junction field-effect transistors, " IEEE Electron Device Lett., vol. 32, no. 3, pp. 303-305, Mar. 2011.
11. K.-S. Im, J.-B. Ha, K.-W. Kim, J.-S. Lee, D.-S. Kim, S.-H. Hahm, and J.-H. Lee, "Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate, " IEEE Electron Device Lett., vol. 31, no. 3, pp. 192-194, Mar. 2010.
12. K.-W. Kim, S.-D. Jung, D.-S. Kim, H.-S. Kang, K.-S. Im, J.-J. Oh, J.-B. Ha, J.-K. Shin, and J.-H. Lee, "Effects of TMAH treatment on device performance of normally off Al2O3/GaN MOSFET, " IEEE Electron Device Lett., vol. 32, no. 10, pp. 1376-1378, Oct. 2011.
13. Y. Hori, C. Mizue, and T. Hashizume, "Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures, " Phys. Stat. Sol. C, vol. 9, no. 6, pp. 1356-1360, Jun. 2012.
14. T. Marron, S. Takashima, Z. Li, and T. P. Chow, "Impact of annealing on Al2O3 gate dielectric for GaN MOS devices, " Phys. Stat. Sol. C, vol. 9, no. 3/4, pp. 907-910, Mar. 2012.
15. W. Huang, T. Khan, and T. P. Chow, "Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates, " IEEE Electron Device Lett., vol. 27, no. 10, pp. 796-798, Oct. 2006.