Short channel, floating body, and 3D coupling effects in triple-gate MOSFET

International Journal of High Speed Electronics and Systems

Volumn 18, Issue 4, 2008, Pages 773-782

  Na, Kyoung Il ^a   Lee, Jung Hee ^a   Cristoloveanu, Sorin ^b   Bae, Young Ho ^c   Patruno, Paul ^d   Xiong, Wade ^e  

^a Kyungpook National University   (South Korea)

^b MINATEC   (France)

^c Uiduk University   (South Korea)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

Coupling effect; FinFET; GIFBE; MOSFET; MuGFET; Short channel effect; SOI; Triple gate transistor

Indexed keywords

FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); THREE DIMENSIONAL;

COUPLING EFFECT; FINFET; GIFBE; MOSFET; MUGFET; SHORT-CHANNEL EFFECT; SOI; TRIPLE-GATE TRANSISTOR;

MOSFET DEVICES;

EID: 60749090913     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156408005758     Document Type: Article

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