Enhancement-mode operation of nanochannel array (NCA) AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 354-356

  Liu, Shenghou ^a   Cai, Yong ^a   Gu, Guodong ^b   Wang, Jinyan ^c   Zeng, Chunhong ^a   Shi, Wenhua ^a   Feng, Zhihong ^b   Qin, Hua ^a   Cheng, Zhiqun ^e   Chen, Kevin J ^d   Zhang, Baoshun ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

^c PEKING UNIVERSITY   (China)

^d HANGZHOU DIANZI UNIVERSITY   (China)

^e HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); enhancement mode (E mode); high frequency; nanochannel array (NCA)

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CHANNEL WIDTHS; ELECTRON GAS CHANNELS; ENHANCEMENT-MODE; EXTRINSIC TRANSCONDUCTANCE; GATE CONTROL; GATE LEAKAGES; HIGH FREQUENCY HF; M-SCALE; NANO CHANNELS; NANO SCALE; NANOCHANNEL ARRAY (NCA); PARALLEL CHANNEL; PEAK TRANSCONDUCTANCE; PIEZOELECTRIC POLARIZATIONS; RF PERFORMANCE;

ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862783951     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179003     Document Type: Article

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