On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes

IEEE Journal of Quantum Electronics

Volumn 50, Issue 6, 2014, Pages 483-490

  Zhang, Shaofei ^a   Connie, Ashfiqua T ^a   Laleyan, David A ^a   Nguyen, Hieu Pham Trung ^a   Wang, Qi ^a   Song, Jun ^a   Shih, Ishiang ^a   Mi, Zetian ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

GaN; Joule heating; light emitting diode; Nanowire; surface recombination

Indexed keywords

EFFICIENCY; JOULE HEATING; NANOWIRES; THERMAL CONDUCTIVITY;

CARRIER CONFINEMENTS; CARRIER INJECTION; GAN; JUNCTION TEMPERATURES; NANOWIRE LIGHT EMITTING DIODES; NON-RADIATIVE; SURFACE BAND BENDING; SURFACE RECOMBINATIONS;

LIGHT EMITTING DIODES;

EID: 84901047199     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2014.2317732     Document Type: Article

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