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Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

Surface depletion effects in semiconducting nanowires

(4) Simpkins, B S a Mastro, M A a Eddy, C R a Pehrsson, P E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER NETWORKS; ELECTRIC WIRE; ELECTRONIC PROPERTIES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURES; NANOWIRES; NUMERICAL METHODS; POISSON EQUATION; SEMICONDUCTING GALLIUM; SOLVENT EXTRACTION; SURFACES;

(PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); ANALYTICAL TREATMENT; CARRIER (CO); CONCENTRATION (COMPOSITION); DOPANT CONCENTRATIONS; MATE RIAL PROPERTIES; NANOELEMENTS; ORDER-OF MAGNITUDES; POISSON; SEMICONDUCTING NANOWIRES; SEMICONDUCTOR NANOWIRES (SNW); SURFACE BAND BENDING; SURFACE BARRIERS; SURFACE DEPLETION; SYSTEMATIC (CO); WIDE-RANGE;

SURFACE PROPERTIES;

EID: 44649187420 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2932072 Document Type: Article

Times cited : (98)

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