Nucleation conditions for catalyst-free GaN nanowires

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 94-99

  Bertness, K A ^a   Roshko, A ^a   Mansfield, L M ^a   Harvey, T E ^a   Sanford, N A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CATALYST ACTIVITY; CRYSTALLOGRAPHY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON;

CATALYST-FREE GAN; FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); NANOWIRES; SEMICONDUCTING III-V MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 33847276535     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.209     Document Type: Article

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