Electron leakage effects on GaN-based light-emitting diodes

Optical and Quantum Electronics

Volumn 42, Issue 2, 2010, Pages 89-95

  Piprek, Joachim ^a   Li, Simon ^b  

^a NUSOD Institute LLC   (United States)

^b Crosslight Software Inc   (Canada)

Author keywords

Efficiency droop; Electron blocker layer; Electron leakage; Gallium nitride; Light emitting diode

Indexed keywords

ACCEPTOR DENSITY; DEVICE SIMULATIONS; ELECTRON LEAKAGE; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; NITRIDE BASED LIGHT EMITTING DIODES;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED);

ELECTRONS;

EID: 79951772113     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9437-z     Document Type: Article

References (23)

1. I.H. Brown, et al. 2005 Determination of the piezoelectric field in InGaN quantum wells Appl. Phys. Lett. 86 131108 10.1063/1.1896446 2005ApPhL..86m1108B (Pubitemid 40564865)
2. K.A. Bulashevich, et al. 2006 Simulation of visible and ultraviolet group-III nitride light emitting diodes J. Comput. Phys. 213 214 1091.81525 10.1016/j.jcp.2005.08.011 2006JCoPh.213..214B (Pubitemid 43174873)
3. S.F. Chichibu, et al. 1998 Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Appl. Phys. Lett. 73 2006 10.1063/1.122350 1998ApPhL..73.2006C (Pubitemid 128672052)
4. Crosslight Software, Burnaby, Canada ( http://www.crosslight.com )
5. V. Fiorentini, et al. 2002 Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures Appl. Phys. Lett. 80 1204 10.1063/1.1448668 2002ApPhL..80.1204F (Pubitemid 34180526)
6. C.A. Flory G. Hasnain 2001 Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects IEEE J. Quant. Electron. 37 244 10.1109/3.903075 2001IJQE...37..244F (Pubitemid 32254582)
7. J. Hader, et al. 2008 On the importance of radiative and Auger losses in GaN-based quantum wells Appl. Phys. Lett. 92 261103 10.1063/1.2953543 2008ApPhL..92z1103H
8. Hirayama H. et al.: 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. Phys. Status Solidi A 206, 1176 (2009)
9. J.P. Ibbetson, et al. 2000 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors Appl. Phys. Lett. 77 250 10.1063/1.126940 2000ApPhL..77..250I
10. M.H. Kim, et al. 2007 Origin of efficiency droop in GaN-based light-emitting diodes Appl. Phys. Lett. 91 183507 10.1063/1.2800290 2007ApPhL..91r3507K (Pubitemid 350037243)
11. A. Knauer, et al. 2009 MOVPE growth for UV-LEDs Proc. SPIE 7231 72310G 10.1117/12.816927
12. A. Laubsch, et al. 2009 On the origin of IQE-'droop' in InGaN LEDs Phys. Status Solidi C 6 S913 10.1002/pssc.200880950 2009PSSCR...6S.913L
13. B. Monemar, et al. 2010 Mg-related acceptors in GaN Phys. Status Solidi C 7 1850 1852 10.1002/pssc.200983436 2010PSSCR...7.1850M
14. Piprek J., Li S.: Ch 10. In: Piprek, J. (ed.) Optoelectronic Devices: Advanced Simulation and Analysis., Springer, New York (2005)
15. Piprek J.: Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. Academic Press, San Diego (2003)
16. J. Piprek, et al. 2006 Effects of built-in polarization on InGaN/GaN vertical-cavity surface-emitting lasers IEEE Phot. Technol. Lett. 18 7 10.1109/LPT.2005.860045 2006IPTL...18....7P (Pubitemid 46542475)
17. Piprek, J. (ed.): Nitride Semiconductor Devices: Principles and Simulation. Wiley-VCH, Berlin (2007)
18. J. Piprek 2010 Efficiency droop in nitride-based light-emitting diodes Phys. Status Solidi A 207 2217 10.1002/pssa.201026149 2010PSSAR.207.2217P
19. F. Renner, et al. 2002 Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy Appl. Phys. Lett. 81 490 492 10.1063/1.1493229 2002ApPhL..81..490R
20. Y.C. Shen, et al. 2007 Auger recombination in InGaN measured by photoluminescence Appl. Phys. Lett. 91 14 141101 10.1063/1.2785135 2007ApPhL..91n1101S (Pubitemid 47534188)
21. K.J. Vampola, et al. 2009 Measurement of electron overflow in 450 nm InGaN light-emitting diode structures Appl. Phys. Lett. 94 061116 10.1063/1.3081059 2009ApPhL..94f1116V
22. Y. Yang, et al. 2008 Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes IEEE Trans. Electron. Dev. 55 1771 10.1109/TED.2008.923561 2008ITED...55.1771Y
23. H. Zhang, et al. 2004 Measurement of polarization charge and conduction-band offset at InGaN/GaN heterojunction interfaces Appl. Phys. Lett. 84 4644 4646 10.1063/1.1759388 2004ApPhL..84.4644Z