Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

Optics Express

Volumn 20, Issue 12, 2012, Pages 13478-13487

  Jiang, Bin ^a   Zhang, Chunfeng ^a   Wang, Xiaoyong ^a   Xue, Fei ^a   Park, Min Joo ^b   Kwak, Joon Seop ^b   Xiao, Min ^a,c  

^a NANJING UNIVERSITY   (China)

^b Sunchon National University   (South Korea)

^c UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; EXCITONS; MODULATORS; NANORODS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER RECOMBINATION; EMISSION DYNAMICS; EMISSION PROPERTIES; EXCITON DIFFUSION; INGAN/GAN; SURFACE DAMAGES; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE SPECTRUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863758113     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.013478     Document Type: Article

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