Surface potential of n - And p -type GaN measured by Kelvin force microscopy

Applied Physics Letters

Volumn 93, Issue 21, 2008, Pages

  Barbet, S ^a   Aubry, R ^b   Di Forte Poisson, M A ^b   Jacquet, J C ^b   Deresmes, D ^a   Mlin T ^a   Thron D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b ALCATEL THALES III V LAB   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM NITRIDE; GOLD DEPOSITS; HETEROJUNCTIONS; OHMIC CONTACTS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM;

CALIBRATION PROCEDURES; DOPING LEVELS; DOPING RANGES; ENVIRONMENTAL FLUCTUATIONS; GAN EPITAXIAL LAYERS; KELVIN FORCE MICROSCOPIES; KELVIN PROBE FORCE MICROSCOPIES; ORGANIC CHEMICAL VAPOR DEPOSITIONS; REPRODUCIBILITY; SURFACE STATES;

GALLIUM ALLOYS;

EID: 57049092779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3028639     Document Type: Article

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