Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Han, Sang Heon ^a,b   Lee, Dong Yul ^b   Lee, Sang Jun ^a   Cho, Chu Young ^a   Kwon, Min Ki ^a   Lee, S P ^a   Noh, D Y ^a   Kim, Dong Joon ^b   Kim, Yong Chun ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ELECTRON BLOCKING LAYER; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENT DENSITIES; HOLE INJECTION; INGAN/GAN; INJECTION CURRENT DENSITY; LOW CURRENT DENSITY; MULTIPLE QUANTUM WELLS;

CURRENT DENSITY; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 67649126477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153508     Document Type: Article

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