Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers

Optics Express

Volumn 19, Issue 2, 2011, Pages 527-539

  Henneghien, Anne Line ^a   Tourbot, Gabriel ^a   Daudin, Bruno ^a   Lartigue, Olivier ^a   Désières, Yohan ^a   Gérard, Jean Michel ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EXTRACTION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OPTICAL DESIGN; REFRACTIVE INDEX;

ACTIVE MEDIUM; ANISOTROPIC PROPERTY; DENSE ARRAYS; EFFECTIVE REFRACTIVE INDEX; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; HIGH BRIGHTNESS LEDS; LIGHT-EXTRACTION EFFICIENCY; LOW COSTS; SEMICONDUCTOR NANOWIRE; SI SUBSTRATES;

GALLIUM ALLOYS;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ANISOTROPY; ARTICLE; CHEMISTRY; LIGHT; METHODOLOGY; RADIATION EXPOSURE; RADIATION SCATTERING; REFRACTOMETRY;

ANISOTROPY; GALLIUM; LIGHT; NANOTUBES; REFRACTOMETRY; SCATTERING, RADIATION;

EID: 78751479328     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.000527     Document Type: Article

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