Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Meyaard, David S ^a   Lin, Guan Bo ^a   Shan, Qifeng ^b   Cho, Jaehee ^a   Fred Schubert, E ^a,b   Shim, Hyunwook ^c   Kim, Min Ho ^c   Sone, Cheolsoo ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF ASYMMETRY; EXPERIMENTAL EVIDENCE; I - V CURVE; LOW TEMPERATURES; P-N JUNCTION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

CARRIER CONCENTRATION; CARRIER MOBILITY; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 84555202802     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671395     Document Type: Article

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