High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

IEEE Photonics Technology Letters

Volumn 24, Issue 4, 2012, Pages 321-323

  Nguyen, Hieu Pham Trung ^a   Zhang, Shaofei ^a   Cui, Kai ^a   Korinek, Andreas ^b   Botton, Gianluigi A ^b   Mi, Zetian ^a  

^a MCGILL UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

InGaN; light emitting diodes (LEDs); molecular beam epitaxy; nanowire; quantum dot

Indexed keywords

CARRIER CONFINEMENTS; INGAN; INGAN/GAN; INHOMOGENEOUS BROADENING; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; LIGHT-EMITTING DIODES (LEDS); PULSED BIASING; ROOM TEMPERATURE; SI(111) SUBSTRATE; STABLE EMISSIONS;

CRYSTALS; DIODES; EFFICIENCY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NANOWIRES; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; WIRE;

LIGHT EMITTING DIODES;

EID: 84863036706     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2178091     Document Type: Article

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