GaN nanowire surface state observed using deep level optical spectroscopy

Applied Physics Letters

Volumn 96, Issue 16, 2010, Pages

  Armstrong, A ^a   Li, Q ^a   Lin, Y ^a   Talin, A A ^b,c   Wang, G T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; CORE-SHELL; DEEP LEVEL; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP-LEVEL DEFECTS; DEFECT STATE; GAN NANOWIRES; SURFACE STATE;

DEFECTS; ELECTRIC CURRENT MEASUREMENT; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; NANOWIRES; PASSIVATION; PHOTOELECTRICITY;

GALLIUM NITRIDE;

EID: 77951856307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3404182     Document Type: Article

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