Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes

IEEE Journal of Quantum Electronics

Volumn 48, Issue 4, 2012, Pages 551-556

  Chang, Chun Hsiang ^a   Chen, Liang Yi ^a   Huang, Li Chuan ^a   Wang, Yu Ting ^a   Lu, Tzu Chun ^a   Huang, Jian Jang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Internal quantum efficiency; Light emitting diodes; Nanorods

Indexed keywords

EFFECTS OF STRAINS; ETCHING DEPTH; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LED ARRAYS; LIGHT OUTPUT; LIGHT OUTPUT POWER; NON-RADIATIVE RECOMBINATIONS; OPERATING CURRENTS; OPTICAL OUTPUT; QUANTUM CONFINED STARK EFFECT;

DEFECTS; GALLIUM NITRIDE; NANORODS; QUANTUM EFFICIENCY; STRAIN;

LIGHT EMITTING DIODES;

EID: 84863235606     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2187175     Document Type: Article

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