Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon

Applied Physics Letters

Volumn 102, Issue 7, 2013, Pages

  Jahangir, S ^a   Mandl, M ^b   Strassburg, M ^b   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN NANOWIRES; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; MOLECULAR BEAM EPITAXIAL GROWTH; NANOWIRE HETEROSTRUCTURES; NANOWIRE SURFACE; NON-RADIATIVE LIFETIMES; PARYLENES; PHOTOLUMINESCENCE EMISSION; RADIATIVE EFFICIENCY; RADIATIVE PROPERTIES; RED-EMITTING; SILICON SUBSTRATES; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SILICON NITRIDE;

NANOWIRES;

EID: 84874519582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793300     Document Type: Article

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