High efficiency ultraviolet emission from Al xGa 1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Wang, Q ^a   Nguyen, H P T ^a   Cui, K ^a   Mi, Z ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; CARRIER CONFINEMENTS; CORE SHELL STRUCTURE; CORE-SHELL NANOWIRES; DEFECT-FREE; EMISSION WAVELENGTH; GAN NANOWIRES; HIGH-CRYSTALLINE QUALITY; INTERNAL QUANTUM EFFICIENCY; NANOWIRE HETEROSTRUCTURES; NANOWIRE STRUCTURES; NEAR SURFACE REGIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SI (1 1 1); SI(111) SUBSTRATE; SPECTRAL RANGE; ULTRAVIOLET EMISSION; VERTICALLY ALIGNED;

ALUMINUM; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON;

NANOWIRES;

EID: 84864463533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4738983     Document Type: Article

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