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Volumn 104, Issue 18, 2014, Pages

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

(7) Fang, Runchen a,b Gonzalez Velo, Yago b Chen, Wenhao b Holbert, Keith E b Kozicki, Michael N b Barnaby, Hugh b Yu, Shimeng a,b

a ARIZONA STATE UNIVERSITY (United States)

b Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84900388803 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4875748 Document Type: Article

Times cited : (64)

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