A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 55, Issue , 2012, Pages 434-435

  Chang, Meng Fan ^a   Wu, Che Wei ^a   Kuo, Chia Cheng ^a   Shen, Shin Jang ^a   Lin, Ku Feng ^b   Yang, Shu Meng ^a   King, Ya Chin ^a   Lin, Chorng Jung ^a   Chih, Yu Der ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIOMEDICAL APPLICATIONS; CELL CURRENT; CURRENT-MODE SENSE AMPLIFIER; CURRENT-MODE SENSING; DATA STORAGE; LOW POWER; LOW-VOLTAGE; NON-VOLATILE MEMORIES; ON CHIPS; OUTPUT VOLTAGES; READ SPEED; RESISTIVE RAMS; SENSING MARGIN; WRITE OPERATIONS;

DRAIN CURRENT; FLASH MEMORY; MEDICAL APPLICATIONS;

RANDOM ACCESS STORAGE;

EID: 84860672719     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2012.6177079     Document Type: Conference Paper

References (7)

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