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Volumn 60, Issue 2, 2013, Pages 1379-1383

Displacement damage in Tio2 Memristor devices

Author keywords

Displacement damage; memristor; neutrons; protons; RRAM; TiO2

Indexed keywords

DISPLACEMENT DAMAGES; FLUENCES; MEMRISTOR; RADIATION-HARDENED; RRAM; TEST DEVICE; TIO;

EID: 84876270195     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2013.2249529     Document Type: Article
Times cited : (31)

References (13)
  • 2
    • 82455167171 scopus 로고    scopus 로고
    • Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
    • Dec
    • J. P. Strachan, A. C. Torrezan, G. Medeiros-Ribeiro, and R. S. Williams, "Measuring the switching dynamics and energy efficiency of tantalum oxide memristors," Nanotechnology, vol. 22, p. 5, Dec. 2011.
    • (2011) Nanotechnology , vol.22 , pp. 5
    • Strachan, J.P.1    Torrezan, A.C.2    Medeiros-Ribeiro, G.3    Williams, R.S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.