Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells

IEEE Transactions on Nuclear Science

Volumn 60, Issue 6, 2013, Pages 4563-4569

  Gonzalez Velo, Y ^a   Barnaby, H J ^a   Kozicki, M N ^a,b   Dandamudi, P ^a,b   Chandran, A ^a,b   Holbert, K E ^a   Mitkova, M ^c   Ailavajhala, M ^c  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Boise State University   (United States)

Author keywords

Cation; chalcogenide glass; ECM; electrochemical metallization; memristors; nanoionic memory; photo diffusion; photodoping; PMC; programmable metallization cell; radiation effects; ReRAM; resistive switching; total ionizing dose

Indexed keywords

CHALCOGENIDES; DATA STORAGE EQUIPMENT; ELECTROLYTES; GERMANIUM; IONIZING RADIATION; MEMRISTORS; MILITARY ELECTRONIC COUNTERMEASURES; POSITIVE IONS; RADIATION EFFECTS; REDOX REACTIONS; SWITCHING;

CHALCOGENIDE GLASS; ELECTROCHEMICAL METALLIZATION (ECM); PHOTO-DIFFUSION; PHOTODOPING; PMC; PROGRAMMABLE METALLIZATION CELLS; RERAM; RESISTIVE SWITCHING; TOTAL IONIZING DOSE;

NONVOLATILE STORAGE;

EID: 84891560843     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2013.2286318     Document Type: Article

References (42)

1. M. N. Kozicki and W. C. West, "Programmable metallization cell structure and method of making same, " US patent no. 5 761 115, Jun. 1998.
2. M. N. Kozicki, M. Yun, L. Hilt, and A. Singh, "Applications of programmable resistance changes in metal-doped chalcogenides, " in Proc. Symp. on Solid State Ionic Devices, 1999, pp. 1-12.
3. M. N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, "Information storage using nanoscale electrodeposition of metal in solid electrolytes, " Superlat. Microstruct., vol. 34, pp. 459-465, Dec. 2003.
4. M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid-state electrolytes, " IEEE Trans. Nanotechnol., vol. 4, pp. 331-338, May 2005. (Pubitemid 40794460)
5. I. Valov and M. N. Kozicki, "Cation-based resistance change memory, " J. Phys. D: Appl. Phys., vol. 46, no. 7, Feb. 2013.
6. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, "Electrochemical metallization memories-fundamentals, applications, prospects, " Nanotechnology, vol. 22, p. 254003, Jun. 2011.
7. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges, " Adv. Mater., vol. 21, pp. 2632-2663, Jul. 2009.
8. L. Chua, "Memristor-The missing circuit element, " IEEE Trans. Circuit Theory, vol. 18, pp. 507-519, Sep. 1971.
9. L. Chua, "Resistance switching memories are memristors, " Appl. Phys. A, vol. 102, pp. 765-783, 2011.
10. Assessment of the potential and maturity of selected emerging research memory technologies, ITRS Workshop and ERD/ERM Working Group Meeting [Online]. Available: http://www.itrs.net/Links/2010ITRS/2010Update/ToPost/ERD-ERM- 2010FINALRe-portMemoryAssessment-ITRS.pdf
11. Adesto Technologies [Online]. Available: http://www.adestotech.com
12. C. Gopalan, Y. Ma, T. Gallo, J. Wang, E. Runnion, J. Saenz, F. Koushan, P. Blanchard, and S. Hollmer, "Demonstration of conductive bridging random access memory (CBRAM) in logic CMOS process, " Solid-State Electron., vol. 58, pp. 54-61, 2011.
13. N. Derhacobian, S. C. Hollmer, N. Gilbert, and M. N. Kozicki, "Power and energy perspective of nonvolatile memory technology, " Proc. IEEE, vol. 98, pp. 283-298, Jan. 2010.
14. H. Hönigschmid, M. Angerbauer, S. Dietrich, D. Gogl, C. Liaw, M. Markert, R. Symanczyck, L. Altimine, S. Bournat, and G. Muller, "A non-volatile 2 Mbit CBRAM memory core featuring advanced read and program control, " VLSI Circuits Dig. Tech. Papers, pp. 138-139, 2006.
15. R. Symanczyk, R. Dietrich, A. Duch, J. Keller, M. Kund, G. Müller, B. Ruf, P.-H. Albarede, S. Bournat, and L. Bouteille, "Conductive bridging memory development from single cells to 2 Mbit memory ar rays, " in Proc. Nonvolatile Memory Technol. Symp., 2007, pp. 71-75.
16. S. Dietrich, M. Angerbauer, M. Ivanov, D. Gogl, H. Hönigschmid, M. Kund, C. Liaw, M. Markert, R. Symanczyk, L. Altimime, S. Bournat, and G. Müller, "A non-volatile 2 Mbit CBRAM memory core featuring advanced read and program control, " in Proc. VLSI Circuits Dig. Tech. Papers, 2006, pp. 138-144.
17. M. Kund, G. Beitel, C.-U. Pinnow, T. Röhr, J. Schumann, R. Symanczyk, K.-D. Ufert, and G. Müller, "Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm, " in Proc. IEDM Tech. Dig, 2005, pp. 754-757. (Pubitemid 46370960)
18. M. T. Kostyshin, E. V. Mikhailovskaya, and P. F. Romanenko, Sov. Phys. Solid St., vol. 8, pp. 451-453, 1966.
19. A. V. Kolobov and S. R. Elliott, "Photo-doping of amorphous chalco-genides by metals, " Adv. Phys., vol. 40, pp. 625-684, Feb. 1991.
20. M. Kawasaki, J. Kawamura, Y. Nakamura, and M. Aniya, "Ionic con-ductivityof glasses, "Solid State Ionics, vol. 123, pp. 259-269, Aug. 1999.
21. M. Mitkova and M. N. Kozicki, "Ag-Photodoping in Ge-chalcogenide amorphous thin films-reactions products and their characterization, " J. Phys. Chem. Solids, vol. 68, pp. 866-872, 2007. (Pubitemid 46907127)
22. M. A. Ureña, A. A. Piarristeguy, M. Fontana, and B. Arcondo, "Ionic conductivity () in AgGeSe glasses, " Solid State Ionics, vol. 176, pp. 505-512, Feb. 2005.
23. O. Shpotyuk, Semiconducting Chalcogenide Glass 1, R. Fairman and B. Ushkov, Eds.: Elsevier, 2004, ISBN 0127521879.
24. Z. U. Borisova, Glassy Semiconductors. New York, NY, USA: Plenum Press, 1981.
25. M. Mitkova and M. N. Kozicki, "Silver incorporation in Ge-Se glasses used in programmable metallization cell devices, " J. Non-Crystalline Solids, vol. 299-302, pp. 1023-1027, 2002. (Pubitemid 34405833)
26. D. Kamalanathan, S. Baliga, S. C. P. Thermadam, and M. N. Koz-icki, "ON state stability of programmable metalization cell (PMC) memory, " in Proc. Non-Volatile Memory Technology Symp., Nov. 2007, pp. 91-96.
27. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Koz-icki, "Study of multilevel programming in programmable metallization cell (PMC) memory, " IEEE Trans. Electron Dev., vol. 56, pp. 1040-1047, May 2009.
28. D. Kamalanathan, U. Russo, D. Ielmini, and M. N. Kozicki, "Voltage-driven on-off transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory, " IEEE Electron Dev. Let., vol. 30, no. 5, pp. 553-555, May 2009.
29. N. E. Gilbert and M. N. Kozicki, "An embeddable multilevel-cell solid electrolyte memory array, " IEEE J. Solid-State Circ., vol. 42, no. 6, Jun. 2007.
30. M. Mitkova, M. N. Kozicki, H. C. Kim, and T. Alford, "Local structure resulting from photo and thermal diffusion of Ag in Ge-Se films, " J. Non-Crystalline Solids, vol. 338-340, pp. 552-556.
31. M. N. Kozicki, M. Mitkova, J. Zhu, and M. Park, "Nanoscale phase separation in Ag-Ge-Se glasses, " Microelectron. Engrg., vol. 63, pp. 155-159, 2002. (Pubitemid 34777179)
32. M. Mitkova, M. N. Kozicki, H. C. Kim, and T. L. Alford, "Crystallization effects in annealed thin Ge-Se films photodiffused with Ag, " J. Non-Crystalline Solids, vol. 352, pp. 1986-1990, 2006. (Pubitemid 43948963)
33. M. Mitkova, Y. Sakaguchi, D. Tenne, S. K. Bhagat, and T. L. Alford, "Structural details of Ge-rich silver doped chalcogenide glasses for nanoionic nonvolatile memory, " Phys. Status Solidi A, vol. 207, no. 3, pp. 621-626, 2010.
34. M. Mitkova, M. N. Kozicki, H. C. Kim, and T. L. Alford, "Thermal and photodiffusion of Ag in S-rich Ge-S amorphous films, " Thin Film Solids, vol. 449, pp. 248-253, 2004.
35. D. Nesheva, M. Ailavajhala, P. Chen, D. A. Tenne, H. Barnaby, and M. Mitkova, "Study of gamma radiation induced effects in Ge-rich chalcogenide thin films, " in Proc. RAD12 Conf., 2012, pp. 063-7, ISBN 978-86-6125.
36. P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. S. Esqueda, and H. Barnaby, "Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing, " presented at the Proc. IEEE Workshop on Microelectronics and Electron Devices, 2011.
37. M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. J. Barnaby, and I. Sanchez Esqueda, "Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application, " J. Non-Crystalline Solids, 2013.
38. M. Ailavajhala, M. Mitkova, and D. P. Butt, "Simulation and process flow of radiation sensors based on chalcogenide glasses for in-situ measurement capability, " Phys. Status Solidi C, vol. 9, no. 12, pp. 2415-2419, 2012.
39. Y. Gonzalez-Velo, H. J. Barnaby, A. Chandran, D. R. Oleksy, P. Dan-damudi, M. N. Kozicki, K. E. Holbert, M. Mitkova, M. Ailavajhala, and P. Chen, "Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures, " IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3093-3100, Dec. 2012.
40. M. Mitkova, M. N. Kozicki, and J. P. Aberouette, "Morphology of electrochemically grown silver deposits on silver-saturated Ge-Se thin films, " J. Non-Crystalline Solids, vol. 326-327, pp. 425-429, 2003.
41. M. Balakrishnan, M. N. Kozicki, C. D. Poweleit, S. Bhagat, T. L. Al-ford, and M. Mitkova, "Crystallization effects in annealed thin GeS2 films photodiffused with Ag, " J. Non-Crystalline Solids, vol. 353, pp. 1454-1459, 2007. (Pubitemid 46574707)
42. R. Bruchaus, M. Honal, R. Symanczyk, and M. Kund, "Selection of optimized materials for CBRAM based on HT-XRD and electrical test results, " J. Electrochem. Soc., vol. 156, pp. 729-733, 2009.