Investigation on the response of TaOx-based resistive random-access memories to heavy-ion irradiation

IEEE Transactions on Nuclear Science

Volumn 60, Issue 6, 2013, Pages 4520-4525

  Tan, Fei ^a   Huang, Ru ^a   An, Xia ^a   Cai, Yimao ^a   Pan, Yue ^a   Wu, Weikang ^a   Feng, Hui ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Heavy ion irradiation; HRS; LRS; RRAM

Indexed keywords

HEAVY IONS; IRRADIATION; SPACE APPLICATIONS;

DISPLACEMENT DAMAGES; HEAVY ION IRRADATION; HIGH-RESISTANCE STATE; HRS; LOW-RESISTANCE STATE; LRS; RESISTIVE RANDOM-ACCESS MEMORY; RRAM;

RANDOM ACCESS STORAGE;

EID: 84891559758     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2013.2287615     Document Type: Article

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