Heavy ion radiation effects on TiN/HfO2/W resistive random access memory

IEEE Aerospace Conference Proceedings

Volumn , Issue , 2013, Pages

  He, Xiaoli ^a   Geer, Robert E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL APPLICATIONS; IRRADIATION EXPERIMENTS; METAL-INSULATOR-METAL STRUCTURES; NONVOLATILE MEMORY DEVICES; RADIATION INDUCED DEFECTS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING MECHANISMS;

DEFECTS; ION SOURCES; SWITCHING;

RADIATION EFFECTS;

EID: 84878703389     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AERO.2013.6497401     Document Type: Conference Paper

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