Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 106-107

  Yu, Shimeng ^a   Wu, Yi ^a   Chai, Yang ^a   Provine, J ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BI-LAYER DEVICES; ENERGY EFFICIENT; HIGH-RESISTANCE STATE; RESET PULSE; SINGLE LAYER; SWITCHING PARAMETERS; SWITCHING VOLTAGES; TRANSIENT CURRENT; WAVEFORM MEASUREMENT;

ATOMIC LAYER DEPOSITION; PHASE CHANGING CIRCUITS;

POWER QUALITY;

EID: 79959990092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872251     Document Type: Conference Paper

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