SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 115, Issue 13, 2014, Pages

A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality

(6) Hiller, Daniel a Gutsch, Sebastian a Hartel, Andreas M a Löper, Philipp b,d Gebel, Thoralf c Zacharias, Margit a

a UNIVERSITY OF FREIBURG (Germany)

b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

c DTF Technology GmbH (Germany)

d EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DANGLING BONDS; INERT GASES; OPTICAL WAVEGUIDES; RAPID THERMAL ANNEALING;

ANNEALING PROCEDURES; FABRICATION PROCESS; FLASH LAMP ANNEALING; HIGH-TEMPERATURE ANNEALING; MEDIUM TEMPERATURE; OPTOELECTRONIC APPLICATIONS; RAPID THERMAL ANNEALING (RTA); SILICON NANOCRYSTALS;

SILICON;

EID: 84898053185 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4870819 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.