Charge transport in Si nanocrystal/SiO2 superlattices

Journal of Applied Physics

Volumn 113, Issue 13, 2013, Pages

  Gutsch, S ^a   Laube, J ^a   Hartel, A M ^a   Hiller, D ^a   Zakharov, N ^b   Werner, P ^b   Zacharias, M ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CHARGE SEPARATIONS; ELECTRIC FIELD IONIZATION; HYDROGEN PASSIVATION; SILICON NANOCRYSTALS; SILICON OXYNITRIDES; STRUCTURAL CONFIGURATIONS; SUPERLATTICE APPROACH;

ELECTRIC FIELDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; SURFACE DEFECTS;

SUPERLATTICES;

EID: 84880674104     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798395     Document Type: Conference Paper

References (67)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990). 10.1063/1.103561
2. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991). 10.1063/1.104512
3. G. Franzo, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. D. Stefano, P. G. Fallica, and F. Priolo, Appl. Phys. A 74, 1 (2002). 10.1007/s003390101019
4. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nature Mater. 4, 143 (2005). 10.1038/nmat1307
5. L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000). 10.1038/35044012
6. J. Ruan, P. M. Fauchet, L. D. Negro, M. Cazzanelli, and L. Pavesi, Appl. Phys. Lett. 83, 5479 (2003). 10.1063/1.1637720
7. G. Conibeer, M. Green, R. Corkish, Y. Cho, E.-C. Cho, C.-W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer, T. Trupke, B. Richards, A. Shalav, and K.-L. Lin, Thin Solid Films 511-512, 654 (2006). 10.1016/j.tsf.2005.12.119
8. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Bläsing, Appl. Phys. Lett. 80, 661 (2002). 10.1063/1.1433906
9. A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, Phys. Rev. B 85, 165306 (2012). 10.1103/PhysRevB.85.165306
10. D. Hiller, M. Jivanescu, A. Stesmans, and M. Zacharias, J. Appl. Phys. 107, 084309 (2010). 10.1063/1.3388176
11. M. Jivanescu, D. Hiller, M. Zacharias, and A. Stesmans, Europhys. Lett. 96, 27003 (2011). 10.1209/0295-5075/96/27003
12. J.-W. Luo, P. Stradins, and A. Zunger, Energy Environ. Sci. 4, 2546 (2011). 10.1039/c1ee01026c
13. K. Seino, F. Bechstedt, and P. Kroll, Phys. Rev. B 86, 075312 (2012). 10.1103/PhysRevB.86.075312
14. C.-W. Jiang and M. A. Green, J. Appl. Phys. 99, 114902 (2006). 10.1063/1.2203394
15. P. Löper, R. Müller, D. Hiller, T. Barthel, E. Malguth, S. Janz, J. C. Goldschmidt, M. Hermle, and M. Zacharias, Phys. Rev. B 84, 195317 (2011). 10.1103/PhysRevB.84.195317
16. I. Balberg, J. Appl. Phys. 110, 061301 (2011). 10.1063/1.3637636
17. I. Perez-Wurfl, X. Hao, A. Gentle, D.-H. Kim, G. Conibeer, and M. A. Green, Appl. Phys. Lett. 95, 153506 (2009). 10.1063/1.3240882
18. A. Marconi, A. Anopchenko, M. Wang, G. Pucker, P. Bellutti, and L. Pavesi, Appl. Phys. Lett. 94, 221110 (2009). 10.1063/1.3147164
19. R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg, H. Kurz, M. Schmidt, and B. Stegemann, Thin Solid Films 516, 6763 (2008). 10.1016/j.tsf.2007.12.087
20. A. M. Hartel, D. Hiller, S. Gutsch, P. Löper, S. Estradé, F. Peiró, B. Garrido, and M. Zacharias, Thin Solid Films 520, 121 (2011). 10.1016/j.tsf.2011.06.084
21. G. B. Assayag, C. Bonafos, M. Carrada, A. Claverie, P. Normand, and D. Tsoukalas, Appl. Phys. Lett. 82, 200 (2003). 10.1063/1.1536026
22. A. K. Jonscher, Nature 267, 673 (1977). 10.1038/267673a0
23. H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schröder, H. Seidl, and D. Schwann, in Digest of IEEE International Electron Device Meeting 01 12.2.1 (2001). 10.1109/IEDM.2001.979481
24. E. R. v. Schweidler, Ann. Phys. 329, 711 (1907). 10.1002/andp.19073291407
25. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, 2006).
26. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, 1982).
27. A. M. Hartel, S. Gutsch, D. Hiller, C. Kübel, N. Zakharov, P. Werner, and M. Zacharias, Appl. Phys. Lett. 101, 193103 (2012). 10.1063/1.4766284
28. W. Shockley, J. Appl. Phys. 9, 635 (1938). 10.1063/1.1710367
29. S. Ramo, Proc. IRE 27, 584 (1939). 10.1109/JRPROC.1939.228757
30. M. D. Sirkis and N. Holonyak, Am. J. Phys. 34, 943 (1966). 10.1119/1.1972306
31. A. Anopchenko, A. Marconi, E. Moser, S. Prezioso, M. Wang, L. Pavesi, G. Pucker, and P. Bellutti, J. Appl. Phys. 106, 033104 (2009). 10.1063/1.3194315
32. A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960). 10.1103/PhysRev.120.745
33. J. Cai and C.-T. Sah, J. Appl. Phys. 89, 2272 (2001). 10.1063/1.1337596
34. S. Datta, Superlattices Microstruct. 28, 253 (2000). 10.1006/spmi.2000. 0920
35. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, 2005).
36. J. Bardeen, Phys. Rev. Lett. 6, 57 (1961). 10.1103/PhysRevLett.6.57
37. A. D. Gottlieb and L. Wesoloski, Nanotechnology 17, R57 (2006). 10.1088/0957-4484/17/8/R01
38. C. Delerue and M. Lannoo, Nanostructures: Theory and Modelling (Springer, 2004).
39. T. Creazzo, B. Redding, E. Marchena, J. Murakowski, and D. W. Prather, J. Lumin. 130, 631 (2010). 10.1016/j.jlumin.2009.11.007
40. A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Franzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, Nanotechnology 17, 1428 (2006). 10.1088/0957-4484/17/5/044
41. S. Prezioso, A. Anopchenko, Z. Gaburro, L. Pavesi, G. Pucker, L. Vanzetti, and P. Bellutti, J. Appl. Phys. 104, 063103 (2008). 10.1063/1.2977749
42. X. D. Pi, O. H. Y. Zalloum, A. P. Knights, P. Mascher, and P. J. Simpson, J. Phys.: Condens. Matter 18, 9943 (2006). 10.1088/0953-8984/18/43/016
43. M. A. Rafiq, Z. A. K. Durrani, H. Mizuta, M. M. Hassan, and S. Oda, J. Appl. Phys. 104, 123710 (2008). 10.1063/1.3050332
44. J. Frenkel, Phys. Rev. 54, 647 (1938). 10.1103/PhysRev.54.647
45. T. A. Burr, A. A. Seraphin, E. Werwa, and K. D. Kolenbrander, Phys. Rev. B 56, 4818 (1997). 10.1103/PhysRevB.56.4818
46. M. A. Rafiq, Y. Tsuchiya, H. Mizuta, S. Oda, S. Uno, Z. A. K. Durrani, and W. I. Milne, Appl. Phys. Lett. 87, 182101 (2005). 10.1063/1.2119431
47. A. Rose, Phys. Rev. 97, 1538 (1955). 10.1103/PhysRev.97.1538
48. P. Mark and W. Helfrich, J. Appl. Phys. 33, 205 (1962). 10.1063/1.1728487
49. I. Crupi, S. Lombardo, E. Rimini, B. F. C. Gerardi, and M. Melanotte, Appl. Phys. Lett. 81, 3591 (2002). 10.1063/1.1520340
50. V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, J. Carreras, and B. Garrido, J. Phys.: Conf. Ser. 10, 409 (2005). 10.1088/1742-6596/10/1/100
51. S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. van Tendeloo, and V. V. Moshchalkov, Nat. Nanotechnol. 3, 174 (2008). 10.1038/nnano.2008.7
52. M. Jivanescu, A. Stesmans, and M. Zacharias, J. Appl. Phys. 104, 103518 (2008). 10.1063/1.2966690
53. A. Stesmans, M. Jivanescu, S. Godefroo, and M. Zacharias, Appl. Phys. Lett. 93, 023123 (2008). 10.1063/1.2952276
54. S. Cheylan and R. G. Elliman, Appl. Phys. Lett. 78, 1225 (2001). 10.1063/1.1338492
55. A. R. Wilkinson and R. G. Elliman, J. Appl. Phys. 96, 4018 (2004). 10.1063/1.1789265
56. A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, Phys. Rev. B 87, 035428 (2013). 10.1103/PhysRevB.87.035428
57. S. Gutsch, A. M. Hartel, D. Hiller, N. Zakharov, P. Werner, and M. Zacharias, Appl. Phys. Lett. 100, 233115 (2012). 10.1063/1.4727891
58. D. Hiller, S. Goetze, F. Munnik, M. Jivanescu, J. W. Gerlach, J. Vogt, E. Pippel, N. Zakharov, A. Stesmans, and M. Zacharias, Phys. Rev. B 82, 195401 (2010). 10.1103/PhysRevB.82.195401
59. A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. Wiggers, Phys. Rev. Lett. 100, 026803 (2008). 10.1103/PhysRevLett.100.026803
60. N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983). 10.1063/1.94420
61. M. Lannoo, C. Delerue, and G. Allan, J. Lumin. 70, 170 (1996). 10.1016/0022-2313(96)00053-1
62. M. Lannoo, C. Delerue, and G. Allan, J. Lumin. 57, 243 (1993). 10.1016/0022-2313(93)90142-A
63. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977). 10.1103/PhysRevB.15.989
64. B. K. Ridley, J. Phys. C 11, 2323 (1978). 10.1088/0022-3719/11/11/023
65. V. Karpus and V. I. Perel, JETP Lett. 42, 497 (1985).
66. S. Makram-Ebeid and M. Lannoo, Phys. Rev. B 25, 6406 (1982). 10.1103/PhysRevB.25.6406
67. V. Karpus and V. I. Perel, Sov. Phys. JETP 64, 1376 (1986).