Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 3, 1997, Pages 571-574

  Kachurin, G A ^a   Tyschenko, I E ^a   Zhuravlev, K S ^a   Pazdnikov, N A ^a   Volodin, V A ^a   Gutakovsky, A K ^a   Leier, A F ^a   Skorupa, W ^b   Yankov, R A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ion implantation; Photoluminescence; Quantum size effects; Si nanocrystals; Transient annealing

Indexed keywords

ANNEALING; ATOMS; CRYSTALLIZATION; DIFFUSION IN SOLIDS; INCLUSIONS; ION IMPLANTATION; PHASE TRANSITIONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HREM); NEAR INFRARED LUMINESCENCE; QUANTUM SIZE EFFECTS; TRANSIENT ANNEALING;

NANOSTRUCTURED MATERIALS;

EID: 0031546472     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00764-1     Document Type: Article

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