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Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO 2 matrix

(6) Gutsch, S a Hartel, A M a Hiller, D a Zakharov, N b Werner, P b Zacharias, M a

a UNIVERSITY OF FREIBURG (Germany)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING EFFICIENCY; INTERFACE DEFECTS; MODEL-BASED OPC; PHOSPHORUS CONCENTRATION; PHOSPHORUS-DOPED; PHOTOLUMINESCENCE SPECTRUM; POISSONIAN; SILICON NANOCRYSTALS; SILICON OXYNITRIDES; SUPERLATTICE APPROACH;

CHEMICAL VAPOR DEPOSITION; DEFECTS; OPTICAL WAVEGUIDES; PHOSPHORUS; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE;

SILICON OXIDES;

EID: 84862148396 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4727891 Document Type: Article

Times cited : (38)

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