Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications

Applied Physics Letters

Volumn 101, Issue 19, 2012, Pages

  Hartel, A M ^a   Gutsch, S ^a   Hiller, D ^a   Kubel C ^b   Zakharov, N ^c   Werner, P ^c   Zacharias, M ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BLUE SHIFT; IN-SITU OXIDATION; PARASITIC OXIDATION; PHOTOLUMINESCENCE PEAK; PHOTOVOLTAIC APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SILICON NANOCRYSTALS; SIZE CONTROL; THIRD GENERATION; TUNNELING OXIDES;

OPTICAL WAVEGUIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SHRINKAGE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

OXIDATION;

EID: 84869007632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4766284     Document Type: Article

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