Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Wan, Zhenyu ^a   Huang, Shujuan ^a   Green, Martin A ^a   Conibeer, Gavin ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCLUSTERS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; RAPID THERMAL ANNEALING; SILICON CARBIDE; FURNACES;

ANNEALING CONDITION; ANNEALING PROCEDURES; CONVENTIONAL FURNACE ANNEALING; CRYSTALLIZATION MECHANISMS; DEGREE OF CRYSTALLIZATION; RAPID THERMAL ANNEALING (RTA); SILICON CARBIDES (SIC); SILICON NANOCRYSTALS; COSPUTTERING; FURNACE ANNEALING; GRAIN SIZE; HRTEM IMAGES; MATRIX; MATRIX SYSTEMS; NANOCRYSTALLINES; POSITIVE EFFECTS; RAMAN ANALYSIS; SI CONCENTRATION; SI NANOCRYSTAL;

AMORPHOUS SILICON;

EID: 84255214126     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-129     Document Type: Article

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