Silicon nanocrystals from high-temperature annealing: Characterization on device level

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 4, 2013, Pages 669-675

  Löper, Philipp ^a,b   Canino, Mariaconcetta ^c   Lõpez Vidrier, Julian ^d   Schnabel, Manuel ^a   Schindler, Florian ^a   Heinz, Friedemann ^a   Witzky, Anke ^a   Bellettato, Michele ^c   Allegrezza, Marco ^c   Hiller, Daniel ^b   Hartel, Andreas ^b   Gutsch, Sebastian ^b   Hernández, Sergi ^d   Guerra, Roberto ^e   Ossicini, Stefano ^e   Garrido, Blas ^d   Janz, Stefan ^a   Zacharias, Margit ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c CNR   (Italy)

^d UNIVERSITY OF BARCELONA   (Spain)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

quantum dots; silicon carbide; silicon nanocrystals; solar cells; solid phase crystallization

Indexed keywords

ELECTRICALLY ACTIVES; HIGH-TEMPERATURE ANNEALING; INSULATION LAYERS; LIGHT BEAM INDUCED CURRENTS; SELECTIVE CONTACTS; SILICON NANOCRYSTALS; SOLID PHASE CRYSTALLIZATION; TANDEM SOLAR CELLS;

ANNEALING; DOPING (ADDITIVES); INDUCED CURRENTS; NANOCRYSTALS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; SOLAR CELLS;

SILICON;

EID: 84875863384     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200824     Document Type: Article

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