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Applied Physics A: Materials Science and Processing

Volumn 74, Issue 1, 2002, Pages 1-5

Electroluminescence of silicon nanocrystals in MOS structures

(9) Franzo G a Irrera, A a Moreira, E C a Miritello, M a Iacona, F b Sanfilippo, D c Di Stefano, G c Fallica, P G c Priolo, F a

a UNIVERSITY OF CATANIA (Italy)

b CNR IMETEM (Italy)

c STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DEPOSITION; DIELECTRIC MATERIALS; ELECTROLUMINESCENCE; MOS DEVICES; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THIN FILMS;

ANNEALING TEMPERATURE; MOS STRUCTURES; NANOCRYSTALS; THIN FILM DEPOSITION;

SILICON;

EID: 0002246344 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390101019 Document Type: Review

Times cited : (252)

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