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Volumn 101, Issue 14, 2012, Pages

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain

Author keywords

[No Author keywords available]

Indexed keywords

BLUE-SHIFTED; COMPRESSIVE STRAIN; LOW TEMPERATURES; SILICON NANOCRYSTALS; SURFACE PASSIVATION;

EID: 84867562451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4756696     Document Type: Article
Times cited : (64)

References (62)
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    • in this case, the size of the nanocrystal for Fig.1 is taken from [, ]. 10.1016/S0038-1098(96)00774-0
    • in this case, the size of the nanocrystal for Fig.1 is taken from [Y. Kanzawa, T. Kageyama, S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Solid State Commun. 102, 533 (1997)]. 10.1016/S0038-1098(96)00774-0
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    • Guha, S.1
  • 53
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    • 2 matrix with exactly the same volume as the inserted nanocrystals; therefore, the matrix-induced strain discussed here is not included in these calculations. 10.1063/1.3138163
    • 2 matrix with exactly the same volume as the inserted nanocrystals; therefore, the matrix-induced strain discussed here is not included in these calculations. 10.1063/1.3138163
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 191914
    • Yilmaz, D.E.1    Bulutay, C.2    Çaǧin, T.3
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    • See supplementary material at E-APPLAB-101-003241 for experimental details of the measurements presented in this article, including the used samples
    • See supplementary material at http://dx.doi.org/10.1063/1.4756696 E-APPLAB-101-003241 for experimental details of the measurements presented in this article, including the used samples.
  • 60
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    • the authors identify a defect band in the PL of their samples, see [, ]; 10.1116/1.2141620 therefore, the PL spectra in Ref. were fitted with two Gaussians with one fixed at the PL position of the defect and only the SiNC-related peak was plotted in Fig.
    • the authors identify a defect band in the PL of their samples, see [R. Rölver, M. Forst, O. Winkler, B. Spangenberg, and H. Kurz, J. Vac. Sci. Technol. A 24, 141 (2006)]; 10.1116/1.2141620 therefore, the PL spectra in Ref. were fitted with two Gaussians with one fixed at the PL position of the defect and only the SiNC-related peak was plotted in Fig..
    • (2006) J. Vac. Sci. Technol. A , vol.24 , pp. 141
    • Rölver, R.1    Forst, M.2    Winkler, O.3    Spangenberg, B.4    Kurz, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.