Synthesis of silicon quantum dot buried SiOx films with controlled luminescent properties for solid-state lighting

Nanotechnology

Volumn 17, Issue 17, 2006, Pages 4477-4482

  Kang, Z T ^a,b,c   Arnold, B ^d   Summers, C J ^b,c   Wagner, B K ^a,b  

^a GEORGIA TECH RESEARCH INSTITUTE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Georgia Institute of Technology   (United States)

^d FORT VALLEY STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR POLLUTION; FLOW RATE; LIGHTING; LUMINESCENCE; NANOCRYSTALS; NANOSTRUCTURES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OXYGEN; QUANTUM ELECTRONICS; REFRACTIVE INDEX; SILICON; SILICON COMPOUNDS; STOICHIOMETRY; THERMAL EVAPORATION; VACUUM EVAPORATION;

EMISSION PEAKS; EMISSION RANGES; EXCITATION BANDS; GREEN EMISSIONS; IN VACUUMS; LIGHTING APPLICATIONS; LUMINESCENT PROPERTIES; OXYGEN FLOW RATES; RED PHOTOLUMINESCENCES; SI NANOCRYSTALS; SI QUANTUM DOTS; SILICON QUANTUM DOTS; SYNTHESIS OF;

SEMICONDUCTOR QUANTUM DOTS;

NANOCRYSTAL; NANOFILM; OXYGEN; QUANTUM DOT; SILICON;

ARTICLE; FLOW RATE; GAS FLOW; INFRARED RADIATION; LIGHT INTENSITY; PHOTOLUMINESCENCE; PRIORITY JOURNAL; STOICHIOMETRY; SYNTHESIS; ULTRAVIOLET RADIATION;

EID: 33947410698     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/17/032     Document Type: Article

References (27)

1. Fauchet P M 2005 Mater. Today 8 26
2. Nishio K, Koga J, Yamaguchi T and Yonezawa F 2003 Phys. Rev. B 67 195304
3. Tong J F, Hsiao H L and Hwang H L 1999 Appl. Phys. Lett. 74 2316
4. Pei Z and Hwang H L 2003 Appl. Surf. Sci. 212/213 760
5. Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 Phys. Rev. Lett. 82 661
6. Chan S and Fauchet P M 1999 Appl. Phys. Lett. 75 274
7. Park N M, Choi C J, Seong T Y and Park S J 2001 Phys. Rev. Lett. 86 1355
8. Park N M, Kim T S and Park S J 2001 Appl. Phys. Lett. 78 2575
9. Kim B H, Cho C H, Kim T W, Park N M, Sung G Y and Park S J 2005 Appl. Phys. Lett. 86 091908
10. Chen X Y, Lu Y F, Tang L J, Wu Y H, Cho B J, Xu X J, Dong J R and Song W D 2005 J. Appl. Phys. 97 014913
11. Kahler U and Hofmeister H 2002 Appl. Phys. A 74 13
12. Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M and Blasing J 2002 Appl. Phys. Lett. 80 661
13. Nesheva D, Raptis C, Perakis A, Bineva I, Aneva Z, Levi Z, Alexandrova S and Hofmeister H 2002 J. Appl. Phys. 92 4678
14. Rinnert H, Vergnat M, Marchal G and Burneau A 1998 Appl. Phys. Lett. 72 3157
15. Wu X L and Xue F S 2004 Appl. Phys. Lett. 84 2808
16. Min K S, Shcheglov K V, Yang C M and Atwater H A 1996 Appl. Phys. Lett. 69 2033
17. Pearton S J, Abernathy C R, Overberg M E, Thaler G T, Onstine A H, Gila B P, Ren F, Lou B and Kim J 2002 Mater. Today 5 24
18. Zorpette G 2002 IEEE Spectrum 39 70
19. Mueller-Mach R, Mueller G O, Krames M R and Trottier T 2002 IEEE J. Sel. Top. Quantum Electron. 8 339
20. Credo G M, Mason M D and Buratto S K 1999 Appl. Phys. Lett. 74 1978
21. Wang Y Q, Wang Y G, Cao L and Cao Z X 2003 Appl. Phys. Lett. 83 3474
22. Nesheva D, Bineva I, Levi Z, Aneva Z, Merdzhanova T and Pivin J C 2003 Vacuum 68 1
23. Wecht K W 1991 Large-range refractive-index control of silicon monoxide antireflection coatings using oblique incident thermal evaporation Appl. Opt. 30 4133
24. Kwack H S, Sun Y and Cho Y H 2003 Appl. Phys. Lett. 83 2901
25. Zacharias M, Heitmann J, Yi L, Scholz R, Reiche M and Gosele U 2002 Proc. SPIE 4808 28
26. Yi L X, Heitmann J, Scholz R and Zacharias M 2003 J. Phys.: Condens. Matter 15 S2887
27. Wang Y Q, Chen W D, Liao X B and Cao Z X 2003 Nanotechnology 14 1235