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Volumn 520, Issue 1, 2011, Pages 121-125
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Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices
a
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Author keywords
Fourier transfomed infrared spectroscopy; Nanocrystals; Oxynitride; Photoluminescence; Plasma enhanced chemical vapor deposition; Silicon; Size control; Superlattices
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Indexed keywords
ANALYTICAL TECHNIQUES;
ANNEALING TEMPERATURES;
FOURIER TRANSFOMED INFRARED SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROMETRY;
FT-IR INVESTIGATION;
HEATING RAMPS;
HEATING UP;
HYDROGEN EFFUSION;
LAYER THICKNESS;
MATRIX;
OXYNITRIDE;
OXYNITRIDES;
PEAK POSITION;
QUANTUM CONFINEMENT EFFECTS;
SILICON NANOCRYSTALS;
SILICON OXYNITRIDES;
SIZE CONTROL;
SIZE-CONTROLLED GROWTH;
STRETCHING VIBRATIONS;
SUB-LAYERS;
THERMAL-ANNEALING;
VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;
WAVE NUMBERS;
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
FOURIER TRANSFORMS;
HEATING;
HYDROGEN;
HYDROGEN BONDS;
INVESTMENTS;
NANOCRYSTALS;
PHASE SEPARATION;
PHOTOELECTRON SPECTROSCOPY;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTROSCOPY;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
SILICON NITRIDE;
SPECTROSCOPIC ELLIPSOMETRY;
STRETCHING;
SUPERLATTICES;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
SILICON OXIDES;
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EID: 80054045148
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.084 Document Type: Article |
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Times cited : (118)
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References (26)
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