Strained interface defects in silicon nanocrystals

Advanced Functional Materials

Volumn 22, Issue 15, 2012, Pages 3223-3232

  Lee, Benjamin G ^a   Hiller, Daniel ^b   Luo, Jun Wei ^a   Semonin, Octavi E ^a,c   Beard, Matthew C ^a   Zacharias, Margit ^b   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF FREIBURG   (Germany)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

atomistic pseudopotential method; interface defects; optical absorption; photothermal deflection spectroscopy; silicon nanocrystals

Indexed keywords

INTERFACE DEFECTS; NANOCRYSTAL SURFACE; NON-RADIATIVE RECOMBINATIONS; OXIDE MATRIX; PHOTOLUMINESCENCE EFFICIENCY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; PL EFFICIENCY; PSEUDOPOTENTIAL METHOD; PSEUDOPOTENTIALS; SI ATOMS; SI-O-SI BOND; SILICON NANOCRYSTALS; STRAINED INTERFACES;

EFFICIENCY; LIGHT ABSORPTION; NANOCRYSTALS; SILICON;

SURFACE DEFECTS;

EID: 84864740621     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201200572     Document Type: Article

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